3 edition of AlGaAs phased laser for optical communications found in the catalog.
AlGaAs phased laser for optical communications
Nils William Carlson
by National Aeronautics and Space Administration, Langley Research Center in Hampton, Va
Written in English
|Statement||N. W. Carlson.|
|Series||NASA contractor report -- 181869., NASA contractor report -- NASA CR-181788.|
|Contributions||Langley Research Center.|
|The Physical Object|
Laser diodes require complex drive circuitries that involve feedback loops by measuring output optical power, temperature, voltage and input current. But for controlling a laser diode used in applications where high accuracy is not required, a simple laser diode driver circuit can be constructed using LM voltage regulator IC. laser cavity resonators,quantum well lasers,surface emitting lasers,optical bistability,optical modulation,phototransistors,semiconductor lasers,tunnelling,III-V semiconductors,electro-optical effects,gallium arsenide,laser beams,optical communication equipment,semiconductor quantum wells,OFDM modulation,aluminium compounds,conduction bands.
CiteScore: ℹ CiteScore: CiteScore measures the average citations received per peer-reviewed document published in this title. CiteScore values are based on citation counts in a range of four years (e.g. ) to peer-reviewed documents (articles, reviews, conference papers, data papers and book chapters) published in the same four calendar years, divided by the number of. MACOM has a large portfolio of optical modulator drivers for applications covering distances of hundreds of meters up to thousands of kilometers at data rates from 1 Gbps up to Gbps and beyond. This includes drivers for high performance Mach-Zehnder modulators, externally modulated lasers (EML) and directly modulated lasers (DML).
The photon then causes the atom to decay to its ground state and emit another photon identical to the incoming photon. This is the second step in the creation of a laser beam. It happens many, many times as the laser photons pass through the optical cavity until the laser . Switched Path Length Phase Shifters A simple system for the optical distribution of the microwave phase reference signal, shown in Figure 1, is currently under development for phased-array use.[2,3] It consists of an optical source, intensity modulated at the reference frequency, an optical distribution network and a photodiode to return the reference signal to the electrical domain, followed.
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Phased array of semiconductor diode lasers suitable for optical communications. During this program, a number of diode laser array designs were investigated in an effort to develop the technology necessary to demonstrate a high-power coherent diode AlGaAs laser array for application as a source in free-space optical communications systems.
Get this from a library. AlGaAs phased laser for optical communications. [N W Carlson; Langley Research Center.]. This thesis describes several semiconductor injection laser diodes and related optoelectronic devices that can be used as light sources for optical communication systems, and develops the intrinsic electrical model of the laser diode.
All the devices were grown from the GaAs-GaAlAs ternary system using the liquid phase epitaxy technique. The AlGaAs materials are very useful for the fabrication Author: Joseph Katz.
This paper aims to report various lasing characteristics of AlGaAs/GaAs single quantum well laser for optical communication systems. Under modeling and mathematical simulation, we have calculated. Optical phase modulation by injecting coherent CW light into a directly frequency modulated semiconductor laser is reported.
Phase modulation was obtained at up to MHz modulation frequency without distortion for a GHz full locking bandwidth.
A static phase shift of. took place with a mA bias current change in the injection locked by: 1. Introduction. The semiconductor AlGaAs exhibits large cubic non-linearity and low linear and non-linear losses around – nm, which is the range of wavelengths routinely used in optical communication III–V semiconductor can easily be grown in virtually defect-free, good quality wafers by molecular beam epitaxy (MBE), and planar circuits can be fabricated on these.
Arun K. Majumdar, in Optical Wireless Communications for Broadband Global Internet Connectivity, Highlights of Laser Communications Relay Demonstration Efforts. The LCRD space flight is planned for The raw data rate is Gb/s for the LCRD demo, which incorporates : space modem (26″ L × ″ H and ″ W), 5 × Gb/s transmitter, elements: AWG mux.
The single transverse mode AlGaAs/GaAs laser array with pulsed peak power up to mW has been fabricated successfully. The ridge waveguide laser structure was chosen since it needs only one step liquid phase epitaxy which greatly improves the yield.
Optical pickups are optical heads consisting of an optical system and a semiconductor laser, and are used to read signals from the pits (grooves) on discs and to write signals to discs in optical disc systems such as CD, DVD, and Blu-ray Disc.
The roles of optical pickups are as follows: To focus the laser light in the pits on the disc. (). Design and fabrication of AlGaAs/GaAs phase couplers for optical integrated-circuit applications.
Fiber and Integrated Optics: Vol. 5, No. 3, pp. (CDH) laser. 11 Mainly due to their spot size these AlGaAs devices have maximum output SPIE Vol Fiber Optics for Communications and Control () / SINGLE-MODE. Free-space Optical Communication Industrial, Scientific and Medical a new class of semiconductors grown by molecular beam epitaxy and metalorganic vapor phase epitaxy has been created.
These band gap principles have been applied to the development of MACOM’s AlGaAs technology resulting in a significant advancement in the RF performance of. Aflatouni, F. & Hashemi, H. Wideband tunable laser phase noise reduction using single sideband modulation in an electro-optical feed-forward scheme.
Opt. Lett. 37, – (). A novel type of optical beam scanning device based on the same principle as a phased array radar has been made and demonstrated. This phased array optical scanning device consisted of a uniformly illuminated array of ten closely spaced, single mode GaAs/AlGaAs electrooptic waveguides, each of which was individually addressed to give more than 2π radians of optical phase control.
Agrawal and N. Olsson, “Self-phase modulation and spectral broadening of optical pulses in semiconductor laser amplifiers,” IEEE J. Quantum Electron. 25, – (). [Crossref] K. Sato, A. Hirano, and H. Ishii, “Chirp-compensated GHz mode-locked lasers integrated with electroabsorption modulators and chirped gratings.“ All-optical wavelength conversion at Gbit/s in a 4 mm long silicon-organic hybrid waveguide,” in Optical Fiber Communication Conference and National Fiber Optic Engineers Conference (Optical Society of America, ), p.
OWS3. The main theme of this chapter is how an applied electric field alters the optical properties of semiconductors. The chapter covers the origins of physical effects used in electrical to optical data conversion in high-speed optical communications systems, linear electro-optic effect, electrorefraction and electroabsoprtion.
Optical phase modulation obtained by injecting coherent CW light into a directly frequency-modulated semiconductor laser is reported. Phase modulation at up to a 1 GHz modulation frequency has been obtained without compression for a GHz half locking band-width.
Phase deviation can be represented by the ratio of the original FM deviation to the locking half bandwidth. A large-scale silicon nanophotonic phased array with more than 4, antennas is demonstrated using a state-of-the-art complementary metal-oxide–semiconductor (CMOS) process, enabling arbitrary.
Phased locked arrays of multiple AlGaAs diode laser emitters were investigated both in edge emitting and surface emitting configurations. CSP edge emitter structures, coupled by either evanescent waves or Y-guides, could not achieve the required powers (greater than or similar to mW) while maintaining a diffraction limited, single lobed.
AlGaAs/GaAs heterostructures are the base of many semiconductor devices. The fabrication of new types of devices demands heterostructures with special features, such as large total thickness (~20 μm), ultrathin layers (~1 nm), high repeatability (up to periods) and uniformity, for which a conventional approach of growing such heterostructures is insufficient and the development of new.Lasers, Optical Amplifiers, and Laser Optics (9) Light-emitting Diodes (1) Medical Optics and Biotechnology (1) Nanophotonics, Metamaterials, and Photonic Crystals (8) Nonlinear Optics (3) Optical Communications and Interconnects (11) Optical Design and Fabrication (3) Optical Devices and Detectors (5) Optical Fibers (3) Optical Materials (1).Watch a video definition of total internal reflection.
Modes When light is guided down a fiber (as microwaves are guided down a waveguide), phase shifts occur at every reflective boundary. There is a finite discrete number of paths down the optical fiber (known as modes) that produce constructive (in phase and therefore additive) phase shifts that reinforce the transmission.